rev 1.0 1 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem d2 s2 g2 s1 d1 g1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameters/test conditions symbol n - channel p - channel units drain - source voltage v d s 4 0 - 4 0 v gate - source voltage v gs 20 20 v t c = 25 c 12 - 8 .8 continuous drain current t c = 70 c i d 8 - 5.8 pulsed drain current 1 i dm 50 - 50 avalanche current i a s 19 - 18 a avalanche energy l = 0. 1 mh e as 20 19 mj t c = 25 c 3 power dissipation t c = 70 c p d 2.1 w junction & storage temperature range t j , t stg - 55 to 150 lead temperature ( 1 / 16 from case for 10 sec.) t l 275 c thermal resistance ratings thermal resistance symbol typical maximum units junction - to - case r ? j c 6 c / w junction - to - ambient r ? ja 42 c / w 1 pulse width limited by maximum junction temperature. 2 du ty cycle ? 1 % electrical characteristics (t j = 25 c, unless otherwise noted) limits unit parameter symbol test conditions min typ max static v gs = 0v, i d = 250 ? a drain - source breakdown voltage v (br)dss v gs = 0v, i d = - 250 ? a n - ch p - ch 4 0 - 4 0 v ds = v gs , i d = 250 ? a gate threshold voltage v gs(th) v ds = v gs , i d = - 250 ? a n - ch p - ch 1.7 - 1.7 2.0 - 2.0 3.0 - 3.0 v g : gate d : drain s : source product summary v (br)dss r ds(on) i d n - channel 4 0 30 m 12 a p - channel - 4 0 55 m - 8.8 a s1 g1 s2 g2 d1/d2
rev 1.0 2 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem v ds = 0v, v gs = 20v gate - body leakage i gss v ds = 0v, v gs = 20v n - ch p - ch 100 100 na v ds = 32 v, v gs = 0v v ds = - 32 v, v gs = 0v n - ch p - ch 1 - 1 v ds = 3 0v, v gs = 0v, t j = 55 c zero gate voltage drain cur rent i dss v ds = - 3 0v, v gs = 0v, t j = 55 c n - ch p - ch 10 - 10 ? a v ds = 5v, v gs = 10v on - state drain current 1 i d(on) v ds = - 5v, v gs = - 10v n - ch p - ch 50 - 5 0 a v gs = 5 v, i d = 6a v gs = - 5 v, i d = - 4. 5a n - ch p - ch 3 9 76 50 99 v gs = 10v, i d = 7 a drain - source on - state resistance 1 r ds(on) v gs = - 10v, i d = - 5.5 a n - ch p - ch 2 6 4 7 30 55 m v ds = 10v, i d = 7 a forward transconductance 1 g fs v ds = - 10v, i d = - 5. 5 a n - ch p - ch 1 8 1 0 s dynamic input capacitance c iss n - ch p - ch 495 558 6 43 725 output capacitance c oss n - ch p - ch 110 250 1 43 325 reverse transfer capacitance c rss n - channel v gs = 0v, v ds = 10v, f = 1mhz p - channel v gs = 0v, v ds = - 10v, f = 1mhz n - ch p - ch 41 60 53 78 pf gate resistance r g v gs = 0 v, v ds = 0 v, f = 1mhz n - ch p - ch 1.8 7 total gate charge 2 q g n - ch p - ch 12 11 gate - source charge 2 q gs n - ch p - ch 1.8 1.7 gate - drain charge 2 q gd n - channel v ds = 0.5v (br)dss , v gs = 10v, i d = 7 a p - channel v ds = 0.5v (br)dss , v gs = - 10v, i d = - 5.5 a n - ch p - ch 1.6 1.5 nc
rev 1.0 3 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem turn - on delay time 2 t d(on) n - ch p - ch 1.7 5.4 3.2 1 2 rise time 2 t r n - ch p - ch 5.6 7.8 10 1 6.5 turn - off delay time 2 t d(off) n - ch p - ch 7.6 16 14 3 0 fall time 2 t f n - channel v ds = 20 v i d ? 1a, v gs = 10v, r gen = 6 p - channel v ds = - 20 v i d ? - 1a, v gs = - 10v, r gen = 6 n - ch p - ch 2.8 10 5.5 18 ns source - drain diode ratings and characteristics (t j = 25 c) i f = 7 a, v gs = 0v forward voltage 1 v sd i f = - 5.5 a, v gs = 0v n - ch p - ch 1 .2 - 1 .2 v i f = 7 a, dl f /dt = 100a / ? s reverse recovery time t rr i f = - 5.5 a, dl f /dt = 100a / ? s n - ch p - ch 40 5 0 ns reverse recovery charge q rr n - ch p - ch 28 50 n c 1 pulse test : pulse width ? 300 ? s ec, duty cycle ? 2 % . 2 independent of operating temperature. remark: the product marked with p 30 04 n d5 g, date cod e or lot #
rev 1.0 4 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem n - channel body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4
rev 1.0 5 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem
rev 1.0 6 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem p - channel body diode forward voltage variation with source current and temperature 25 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125 c 1.0 0.8 1.2 -55 c 1.4
rev 1.0 7 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem
rev 1.0 8 oct - 21 - 200 9 n - & p - channel enhancement mode field effect transistor p 30 04 n d5g to - 252 - 5 halogen - free & lead - free niko - sem
|
